| PART |
Description |
Maker |
| TV15C100J-G TV15C110J-G TV15C120J-G TV15C130J-G TV |
Working Peak Reverse Voltage : 5.0 - 170 Volts , Power Dissipation : 1500 Watts , RoHS Device 工作峰值反向电压：5.0 - 170伏特，功耗：1500瓦，符合RoHS装置
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Comchip Technology Co., Ltd.
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| IDT74FCT825BTSOB IDT74FCT825BTSO IDT74FCT825BTQB I |
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:60V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:50V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
CAP 0.82UF 50V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.1UF 50V 10% X7R SMD-1805 TR-7-PL SN-NIBAR
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS FCT SERIES, 9-BIT DRIVER, TRUE OUTPUT, CDFP24
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IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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| P6KE18A P6KE22 P6KE36A P6KE6.8A P6KE7.5A P6KE160 P |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA.
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS 600瓦特峰值功率瞬态电压抑制器
Power Amplifier Driver 32-VQFN -40 to 85 600瓦特峰值功率瞬态电压抑制器
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 284.00 V. Test current IT = 1 mA.
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Shanghai Sunrise Electronics
Bytes
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| NTE5313 NTE5314 NTE5315 NTE5316 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 200V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 400V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 600V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 800V.
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NTE Electronics
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| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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NTE[NTE Electronics]
|
| C230 C233 C231 C232 C231B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V.
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MOTOROLA[Motorola, Inc]
|
| 1N250B 1N250C 1N1191 1N1192 1N248B 1N248C 1N1198 1 |
PEAK REPETITIVE REVERSE VOLTAGE DC BLOCKING VOLTAGE
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| SMAJ530AMP550 SMAJ530550 |
Surface Mount TRANSZORB Transient Voltage Suppressors Peak Pulse Power 300W Reverse Voltage 530,550V
Diodes
|
Vishay
|
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
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http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| NSD03A20 |
Low Forward Voltage Drop Diode
Device = Diode ;; Ripetitive Peak Reverse Voltage(V) = 200
|
NIEC[Nihon Inter Electronics Corporation]
|
| SA110A SA11A SA13ARL SA43ARL SA33ARL SA24ARL SA14A |
500 Watt Peak Power MiniMOSORB™ Zener Transient Voltage Suppressors
500 Watt Peak PowerMiniMOSORB Zener Transient Voltage Suppressors
500 W Peak Power MiniMOSORB Zener Transient Voltage Suppressor Unidirectional
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
STANDOFF,M-F,1/4H,4-40X.25SS
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:3300pF; Capacitance Tolerance: 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.01uF; Capacitance Tolerance: 5%; Voltage Rating:25VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0805; Termination:SMD RoHS Compliant: Yes
|
On Semiconductor
|
| P6KE200C P6KE9.1 P6KE9.1C P6KE47C P6KE51C P6KE30 P |
600W TRANSIENT VOLTAGE SUPPRESSORS
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 电可擦除可编程逻辑器件
600W TRANSIENT VOLTAGE SUPPRESSORS 600W瞬态电压抑制器
Single Output LDO, 200mA, Fixed(2.5V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State)
Reverse stand-off voltage: 171.00V, 600W transient voltage suppressor
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Panjit International Inc
Microsemi
|
